Mass spectrometers for vacuum, gas, plasma and surface science

for Thin Films, Plasma and Surface Engineering

HPR-30

A residual gas analyser for vacuum process analysis

Measures the vacuum process gas composition, contamination and leak detection
HPR-30

Mass range

200, 300 or 510 amu

Measures vacuum process gas composition

Yes

Measures contamination and leak detection

Yes

Minimum detectable concentration

5 PPB

Sample inlet pressure (Standard)

10-3  to 5 mbar

Sample inlet pressure (Optional)

< 10-4 mbar

Fast measurement speed

Up to 500 measurements per second

   

 

EQP

For the analysis of positive and negative ions, neutrals, and radicals from plasma processes

Measures mass spectra  and energy distributions of ions, neutrals and radicals in plasma
EQP

Mass range

300, 510, or 1000 amu

Ion analysis 

Positive and negative ions

Neutrals analysis

Neutrals and neutral radicals

Plasma pressure (standard)

Up to 0.5 mbar 

Plasma pressure (options)

Up to 2 mbar, 100 mbar and Atmospheric pressure

Sampling options

DC and RF biased sampling electrodes

Energy analysis range 

100 eV or 1000 eV

   
   
   

 

PSM

A mass and energy analyser for plasma diagnostics

Measures mass spectra of ions, neutrals and radicals in plasma
PSM

Mass range

300 or 510 amu

Ion Analysis

Positive ions

Ion Analysis - option

Negative ions

Neutral analysis

Neutrals and neutral radicals analysis

Plasma pressure 

Up to 0.5 mbar

Energy analysis range

100 eV

   
   
   

 

ESPion

An advanced Langmuir probe for plasma diagnostics

Measures electrical properties of low pressure plasma
ESPion

Plasma types

For DC, RF, pulsed  or ECR

Ion and electron density

1014 - 1019 m3

Electron temperature

Up to 10 eV

Plasma pressure

Up to 0.5 mbar

Z- motion drive option

300, 600 or 900 mm

 

 
   
   
   

 

XBS

A system for multiple source monitoring in MBE deposition applications

For molecular beam analysis and deposition rate control
XBS

Mass range

320 or 510 amu

Growth rate determination 

< 0.01 Angstrom per second, species dependant

Cross beam ion source acceptance

+/-35o Beam apertures - 3D modelled

Data output

Real time analogue signal outputs

Residual gas analysis mode- RGA

Leak detection and chamber vacuum analysis

 

 
   

 

IMP-EPD

A system for ion etch control and optimum process quality

End Point detection for ion beam and plasma etch processes
IMP-EPD

Mass range

300 or 510 amu

Multi layer stack monitoring

End point to +/- 5 Angstrom

High sensitivity

Operates with 99.9% masked wafers

Automated

Tool integrated automation recipes

Layer counting

Yes

End point on selected interface

Yes

End point within multi-layered stack

Yes

Residual gas analysis mode - RGA

Leak detection and chamber vacuum analysis

   

 

TPD Workstation

A system for UHV temperature programmed desorption (TPD) studies

Measures the temperature programmed desorption  from solid thin film samples 
TPD Workstation

Mass range

300 or 510, or 1000 amu

Heated sample stage

Ambient to 1000oC

Ramp rate

20 - 40 oC per minute

Detector

Pulse ion counting 

3D real time display

Yes

Multiple data views

Yes

Peak integration and deconvolution

Yes

Background subtraction

Yes

UHV multiport chamber

Yes

Accommodates additional instrumentation

Yes (E.g. ellipsometry)

Fast measurement speed

Up to 500 measurements per second

Sample size

~ 10mm X 10mm

 

SIMS/SNMS Workstation

A design breakthrough for surface analysis

For fast and easy characterisation of layer structures, surface contamination and impurities
SIMS Workstation

Mass range

300, 510 or 1000 amu

Minimum detectable concentration

PPM/PPB level contamination analysis

SIMS - Secondary Ion Mass Spectrometry 

Yes

Analysis of ions ejected from sample surface

Yes (primary ions of oxygen, argon or caesium)

SNMS - Secondary Neutral Mass Spectrometry

Yes

Analysis of ions ejected from sample surface

Yes (primary ions of oxygen, argon or caesium)

Depth resolution

+/- 5 nanometer

Minimum detectable concentration - SIMS

1016 atoms per cubic centimeter - species dependen

Minimum detectable concentration - SNMS

0.01% - species dependant

UHV multiport chamber

Yes

Accommodates additional instrumentation

Yes (E.g. XPS)

 

Compact SIMS

A UHV surface analysis system for thin film depth profiling

Measures the surface composition of the first few nanometers and/or micrometers depth of solid samples

Mass range

50, 300, 510 or 1000 amu

Minimum detectable concentration

 ppm

SIMS - Secondary Ion Mass Spectrometry 

Yes 

Analysis of ions ejected from sample surface

 Yes (primary ions oxygen or argon)

SNMS - Secondary Neutral Mass Spectrometry

Yes 

Analysis of ions ejected from sample surface

 Yes (primary ions oxygen or argon)

Depth resolution

 3 nm

Minimum detectable concentration - SIMS

 1017 atoms cm-3

Minimum detectable concentration - SNMS

 1%

UHV multiport chamber

 No, fixed geometry easy entry chamber

Accommodates additional instrumentation

 No

EQS

A SIMS analyser 

When used in a SIMS or FIB-SEM system - provides for surface composition analysis and elemental mapping
EQS

Mass range

300, 510 or 1000 amu

Ion analysis

Positive and negative ions

Ion energy analysis

100eV, 1000eV option,

Sensitivity

> 106 counts/second per nanoamp for Aluminium

Residual gas analysis mode- RGA

Leak detection and chamber vacuum analysis

SIMS - Secondary Ion Mass Spectrometry

Yes

Analysis of ions ejected from sample surface

Yes (primary ions of oxygen, argon or caesium)

FIB-SEM microscopy SIMS

Yes

Fine-focus electron beam microscope compatible

Yes (E.g. FIB-SEM - Zeiss Auriga 60)

   

 

MAXIM

A SIMS/SNMS analyser

When used in SIMS/SNMS system- provides for surface composition and elemental mapping
MAXIM

Mass range

300, 510 or 1000 amu

Ion analysis

Positive and negative ions

Ion energy analysis

100 eV

Sensitivity

> 106 counts/second per nanoamp for Aluminium

SIMS - Secondary Ion Mass Spectrometry

Yes

Analysis of ions ejected from sample surface

Yes (primary ions of oxygen, argon or caesium)

SNMS - Secondary Neutral Mass Spectrometry

Yes

Analysis of ions ejected from sample surface

Yes (primary ions of oxygen, argon or caesium)

Residual gas analysis mode- RGA

Leak detection and chamber vacuum analysis

   

 

IG5C

A 5 KeV Caesium ion gun for UHV surface analysis applications

Primary ion source for SIMS/SNMS analysis and elemental mapping of electronegative species
IG-5C

Primary ion

Cs+

Ion energy

0.5 to 5.0 KeV

Minimum spot diameter

20 micrometers

Deflection field for mapping

+/- 4 millimeters

Ion beam current

0.1 to 150 nA  

Maximum Etch Rate

30 nm/min for a silicon target

 

 
   

 

IG20

A 5 KeV Argon or Oxygen ion source for UHV surface analysis applications

Primary ion source for SIMS/SNMS analysis and elemental mapping of electropositive species
IG-20

Primary ion

Oxygen, Argon, Xenon

Ion energy

0.5 to 5 KeV

Minimum spot size (elemental mapping)

50 micrometers

Minimum spot size (depth profiling)

100 micrometers

Deflection field for mapping

+/- 4 millimeters

Ion beam current

1.0 to 800 nanoamperes

Typical fast etch rate- Si (5 KeV Ar 600nA)

50 nanometers per second, 450um X 650um crater