Details for AP0002 - Surface Characteristics of Parylene-C Films in an Inductively Coupled O2/CF4 Gas Plasma

  • AP0002 - Surface Characteristics of Parylene-C Films in an Inductively Coupled O2/CF4 Gas Plasma

    Name:
    AP0002 - Surface Characteristics of Parylene-C Films in an Inductively Coupled O2/CF4 Gas Plasma
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    AP0002_Newsletter.pdf
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    Created On:
    07/14/2011 15:37
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    Updated On:
    07/14/2011 15:38
    We investigated the degradation mechanism of OTFT performance in the plasma processing. In order to examine the origin of the degradation mechanism due to the plasma exposure, the relationships between operating parameters and plasma species should be analyzed for fabrication of high performance transistor in the plasma processing. So, we extracted the plasma species using quadrupole mass-spectrometry (QMS). Then, we applied this result for analyzing a degradation mechanism of OTFT devices.