EQP reference
Published Papers

   
 

Plasma Diagnostics

 

Some Published Papers

Applications of the Hiden EQP

 

 

DEPOSITION STUDIES

 
B1 Properties of GeH4 (SiH4) plasma for deposition of device-quality (a-Si:iH) material
W. Kaspera, R. Plättnera, J. Eichmeierb
aSiemens AG, Corporate Research and Development, Munich.
bTechnical University, Munich.
Journal of Non-Crystalline Solids, 1990.
 
B2 Negative ion mass spectra and particulate formation in RF silane plasma deposition experiments
A.A. Howling, J.L. Dorier, Ch. Hollenstein.
Centre de Recherches en Physique des Plasmas , Ecole Polytechnique Federale de Lausanne,
Av des Bains 21, 1007 Lausanne, Switzerland.
Appl. Phys. Letters. Vol 62, page 1341, 1993.
 
B3 Properties of very high frequency plasmas related to technological aspects of amorphous silicon deposition
Ch. Hollenstein, U Kroll*, AA Howling, J Dutta*, J-L Dorier, J. Meier, R Tscharner*, A Shah*
Centre de Recherches en Physique des Plasmas, Ecole Polytechnique Federale de Lausanne, 21
Av. des Bains, CH-1007 Lausanne, Switzerland.
*Institute de Microtechnique, Universite de Neuchantel, 2 Rue Brequet, CH-2000 Neuchantel, Switzerland.
Presented at 11th EC Photovoltaic Solar Energy Conference, Montreux.
 
B4 Negative hydrogenated silicon ion clusters as particle precursors in RF silane plasma deposition experiments
A.A. Howling, L. Sansonnens, J-L. Dorier, Ch. Hollenstein.
Centre de Recherches en Physique des Plasmas, Ecole Polytechnique Federale de Lausanne,
Avenue des Bains 21, CH-1007 Lausanne, Switzerland.
J. Phys D. Appl. Phys. 26 (1993) 1003-1006.
 
B5 Diagnostics of particle genesis and growth in RF silane plasmas by ion mass spectrometry and light scattering
Ch. Hollenstein, J-L. Dorier, J. Dutta, L. Sansonnens, A.A. Howling
Centre de Recherches en Physique des Plasmas, Ecole Polytechnique Federale de Lausanne,
Avenue des Bains 21, CH-1007 Lausanne, Switzerland
Plasma Sources Science & Technology 3 (1994) 278-286
 
B6 Time-resolved measurements of highly polymerized negative ions in radio frequency silane plasma deposition experiments
A.A. Howling, L. Sansonnens, J.-L. Dorier and Ch. Hollenstein
Centre de Recherches en Physique des Plasmas, Ecole Polytechnique Fédérale de Lausanne,
Avenue des Bains 21, CH-1007 Lausanne, Switzerland
J. Appl. Phys. 75 (3). 1 February, 1994
 
B7 In situ mass spectrometry study of plasmas for amorphous silicon deposition
W.G.J.H.M. van Sark, J. Bezemer, M. Kars, M. Kuiper, E.A.G. Hamers and W.F. van der Weg
Utrecht University, Debye Institute, Dept of Atomic and Interface Physics, PO Box 80000, 3508 TA Utrecht, The Netherlands
Presented at the 12th European Photovoltaic Solar Energy Conference, April 11-15, 1994, Amsterdam, The Netherlands
 
B8 Mass spectrometry detection of SiHm and CHm radicals from SiH4-CH4-H2 RF discharges in high temperature deposition conditions of silicon carbide
Patrick Kae-Nune, Jérôme Perrin, Jean Guillon and Jacques Jolly
Laboratoire PRIAM, CNRS-ONERA UMR No 9927, Fort de Palaiseau, Bâtiment S,
F-91120 Palaiseau, France
To appear in J.J.A.P.
 
B9 Gas phase species in a silane/oxygen, helicon deposition plasma
Gareth John Williams
Plama Reserach Laboratory, The Australian National University, Canberra, ACT 0200
November 1993
 
B10 On the ion energy transfer to the substrate during titanium deposition in a hollow cathode arc discharge
aH. Kersten, aH. Steffen, bD. Vender, aH-E. Wagner
aE.-M.-Arndt-University, Department of Physics, Domstr. 10a 17487 Grifswald, F.R.G.
bTU Eindhoven, Department of Physics, PO Box 513, 5600 MB Eindhoven, The Netherlands
Vacuum, volume 46, number 3, pages 305 to 308, 1995
 
B11 Effect of wall charging on an oxygen plasma created in a helicon diffusion reactor used for silica deposition
C. Charles & R. W. Boswell
Plasma Research Laboratory, Research School of Physical Sciences & Engineering,
Australian National University, ACT 0200, Australia
JVST A, volume 13, number 4, July/August 1995
 
B12 Ion kinetic aspects of plasma chemical deposition of PMMA (Polymethylmethacrylate) films
Michael Zeuner, Jürgen Meichsner
Technische Universität Chemnitz, Institut für Physik, D-09107 Chemnitz, Germany
Vacuum, Volume 4, Number 1, Pages 27 to 31, 1995
 
B13 The role of cations in low power radio frequency plasmas of propenoic acid
A. J. Beck, L. O'Toole, R. D. Short, *A. P. Ameen & F. R. Jones
Laboratory for Surface & Interface Analysis, Dept. of Engineering Materials, P.O. Box 600, Sir Robert Hadfield Building, Mappin Street, Sheffield, S1 4DU
J. Chem. Soc., Chem. Commun., 1995, pages 1053 to1054
 
B14 Mass spectrometry of & deposition-rate measurements from radiofrequency-induced plasmas of methyl isobutyrate, methyl methacrylate n-butyl methacrylate
Liam O'Toole, Robert D. Short, *Amir P. Ameen & Frank R. Jones
University of Sheffield, Dept. of Engineering Materials, Laboratory for Surface & Interface Analysis, P.O. Box 600, Sheffield, S1 4DIU
J. Chem. Soc. Faraday Trans, 1995 91(9), pages 1363 to1370
 
B15 Mass spectrometry detection of radicals in SiH4-CH4-CH2 glow discharge plasmas
Patrick Kae-Nune, Jérôme Perrin, Jean Guillon and Jacques Jolly
Laboratoire PRIAM, Unité Mixte de Recherche CNRS-ONERA, Fort de Palaiseau,
Bâtiment S, 91120 Palaiseau, France
Plasma Sources Science & Technology, Volume 4, Number 2, Pages 250 to 259, May 1995
 
B16 Surface recombination probabilities of H on stainless steel, a-Si:H and oxidized silicon determined by threshold ionization mass spectromentry in H2 RD discharges
Patrick Kae-Nune, Jérômoe Perrin, Jacques Jolly *, Jean Guillon
Laboratoire PRIAM, Unité Mixte de Recherche CNRS-ONERA no. 9927, Fort de Palaiseau,
Bât.S, F-91120 Palaiseau, France
Received 5 March 1996; accepted for publication 2 April 1996
 
B17 Mass spectral investigation of the radio-frequency plasma deposition of hexamethyldisiloxane
M.R. Alexander, F.R. Jones, R.D. Short
Department of Engineering Materials, Laboratory for Surface & Interface Analysis, University of
Sheffield, Sir Robert Hadfield Building, Mappin Street, Sheffield, S1 4DU, UK
1997 American Chemical Society - S1089-5647(97)00663-9
 
B18 On the plasma polymerisation of allyl alcohol: an investigation of ion-molecule reactions using a selected ion flow tube
Liam O'Toolea, Christopher A. Mayhewa, Robert D. Shortb
aUniversity of Birmingham, School of Space Research, Chemical Physics Group, Edgbaston, Birmingham, B15 2TT.
bUniversity of Sheffield, Department of Engineering Materials, Laboratory for Surface & Interface
Analysis, Sir Robert Hadfield Building, Mappin Street, Sheffield, SK1 3JD.
J. Chem. Soc., Faraday Trans., 1997, 93(10), 1961-1964
 
B19 An investigation of the mechanisms of plasma polymerisation of allyl alcohol
Laim O'Toole, Robert D. Short
University of Sheffield, Department of Engineering Materials, Laboratory for Surface & Interface
Analysis, Sir Robert Hadfield Building, Mappin Street, Sheffield, SK1 3JD.
J. Chem. Soc., Faraday Trans., 1997, 93(6), 1141-1145
 
B20 Surface reaction kinetics of CH3 in CH4 RF discharge studied by time-resolved threshold ionization mass spectrometry
Masaharu Shiratani 1,2, Jacques Jolly1, Hervé Videlot1 and Jérôme Perrin1,3
1Laboratoire PRIAM, Unité Mixte de Recherche CNRS-ONERA, Fort de Palaiseau, F-91761 Palaiseau Cedex, France.
2Graduate School of Information Science & Electrical Engineering, Kyushu University, Hakozaki, Fukuoka 812-81, Japan.
3Balzers Process Systesm, 5 rue Léon Blum, Z.I. Les Glaises, F-91124 Palaiseau Cedex, France.
Jpn. J. Appl. Phys. Vol 36 (1997) pp. 4752-4755 Part 1, No. 7B, July 1997.
 
B21 The substrate-process interface in thin barrier film coating
C Bichler, M Bischoff, H C Langowski & U Moosheimer
Fraunhofer-Institute for Technology & Packing, Germany
1996 Society of Vacuum Coaters 505/856 - 7188
 
B22 Effects of the axial external magnetic field on the reduction of the dielectric window damage due to capacitive coupling in the inductively coupled plasma
Jung-Hun Kim, Ho-Jun Lee, Youn-Taeg Kim & Ki-Woong Whang
School of Electrical Engineering, Seoul National University, Kwanak-ku, Shinlin-dong San 56-1, Seoul, Korea
Jung-Hoon Joo
Dept. of Materials Science & Engineering, Kunsan National University, Miryongdong San 69-1,
Kunsan, Korea
J. Vac. Sci. Technol. A 15(3) May/June 1997
 
B23 Investigation of stored energy in plasma deposited TiNx films
H Wulff
Institute of Physical Chemistry, University of Greifswald, Soldtmannstrasse 23, D-17489 Greifswald, Germany
C Eggs
Institute of Physics, University of Greifswald, D-17489 Greifswald, Germany
J. Vac. Sci. Technol. A 15(6), Nov/Dec 1997
 
B24 Hydrogen poor cationic silicon clusters in an expanding argon-hydrogen-silane plasma
W M M Kessels, M C M van de Sanden & D C Schram
Department of Applied Physics, Eindhoven University of Technology, PO Box 513, NL-5600 MB
Eindhoven, The Netherlands.
 
B25 Structural properties of a-Si:H related to ion energy distributions in VHF silane deposition plasmas
E A G Hamers, W G J H M van Sark, J Bezemer, H Meiling, W F van der Weg
Debye Institute, Section Interface Physics, Utrecht University, PO Box 80.000, NL-3508 TA Utrecht, The Netherlands
Journal of Non-Crystalline Solids 226(1998) 205-216.
 
B26 Mass spectrometric study of the radio-frequency-induced plasma polymerisation of styrene & propenoic acid
Alison J Beck, Frank R Jones & Robert D Short
University of Sheffield, Department of Engineering Materials, Laboratory for Interface Analysis,
Sir Robert Hadfield Building, Mappin Street, Sheffield, S1 3JD
J. Chem. Soc., Faraday Trans., 1998, 94(4), 559-565
 
B27 Surface reaction probabilities and kinetics of H, SiH3, Si2H5, CH3, and C2H5 during deposition of a-Si:H and a-C:H from H2, SiH4, and CH4 discharges
Jérôme Perrin. Masaharu Shiratani, Patrick Kae-Nune, Hervé Videlot, Jacques Jolly & Jean Guillon
Laboratoire PRIAM, Unité Mixte de Recherche CNRS-ONERA, Fort de Palaiseau, F-91761 Palaiseau Cedex, France
J. Vac. Sci. Technol. A 16(1), Jan/Feb 1998, 278-289
 
B28 Ion flux and deposition rate measurements in the RF continuous wave plasma polymerisation of acrylic acid
A J Beck, R M France, A M Leeson, R D Short, A Goodyear*, N St. J Braithwaite*
Department of Engineering Materials, Laboratory for Surface & Interface Analysis, University of
Sheffield, Sheffield, S1 3JD.
*The Open University, Oxford Research Unit, Foxcombe Hall, Berkeley Road, Boars Hill, Oxford, OX1 5HR
Chem. Commun., 1998, 1221-1222
 
B29 Effects of "processing parameters" in plasma deposition: Acrylic acid revisited
Sennur Canda, Alison J Beck, Liam O'Toole & Robert D Short
Department of Engineering Materials, Laboratory for Surface & Interface Analysis, University of Sheffield, Sir Robert Hadfield Building, Sheffield. S1 3JD
J. Vac. Sci. Technol. A 16(3), May/June 1998, 1702-1709
 
B30 Gas-phase esterification during plasma polymerization of propanoic acid and 1-propanol
Alison J Beck & Robert D Short
Laboratory for Surface & Interface Analysis, Department of Engineering Materials, University of Sheffield, Sir Robert Hadfield Building, Mappin Street, Sheffield. S1 3JD
J. Vac. Sci. Technol. A 16(5), Sep/Oct 1998, 3131-3133
 
B31 Formation of large positive silicon-cluster ions in a remote silane plasma
W M M Kessels, C M Leewis, A Lerous, M C M van de Sanden & D C Schram
Department of Applied Physics, Eindhoven University of Technology, PO Box 513, NL-5600 MB Eindhoven, The Netherlands
Presented at The American Vacuum Society 45th International Symposium, Nov 2-6, 1998 Baltimore
Submitted to Journal of Vacuum Science and Technology
 
B32 Organic films prepared by polymer sputtering
Hynek Biederman
Department of Macromolecular Physics, Charles University, Faculty of Mathematics & Physics, 1800 Prague 8, Czech Republic
J. Vac. Sci. Technol. A 18(4), July/Aug 2000, 1642-1648
 
B33 Cavity ring down detection of SiH3 in a remote SiH4 plasma and comparison with model calculations and mass spectrometry
W M M Kessels, A Leroux, M G H Boogaarts, J P M Hoefnagels, M C M van de Sanden & D C Schram
Department of Applied Physics, Eindhoven University of Technology, PO Box 513, NL-5600 MB Eindhoven, The Netherlands
Submitted to Journal of Vacuum Science and Technology(A)
 
B34 Direct electrical control of diamond-like carbon growth by plasma-enhanced CVD
A A Goruppa, N St J Braithwaite & D M Grant*
Oxford Research Unit, The Open University, Boars Hill, Oxford, OX1 5HR, UK
*Department of Materials Engineering & Design, Nottingham University, NG7 2RD, UKs
Presented at Diamond Films 93, Albufeira, September 20-24, 1993
 
B35 Formation of cationic silicon clusters in a remote silane plasma and their contribution to hydrogenated amorphous silicon film growth
W M M Kessels, C M Leewis, M C M van de Sanden, & D C Schram
Department of Applied Physics, Eindhoven University of Technology, PO Box 513, NL-5600 MB Eindhoven, The Netherlands
Journal of Applied Physics, Volume 86, Number 7, 1 October, 1999
 
B36 Sheath thickness in very-high-frequency plasma chemical vapor deposition of hydrogenated amorphous silicon
W G J H M van Sark, H Meiling, E A G Hamers, J Bezemer & W F van der Weg
Department of Atomic & Interface Physics, Debye Institute, Utrecht University, PO Box 80000, NL-3508 TA Utrecht, The Netherlands
J. Vac. Sci. Technol. A 18(3), May/June 1997
 
B37 The influence of particle energy distributions on the microstructure and properties of reactively sputtered titanium oxide and titanium nitride thin films
C. Muratore, J J Moore & J A Rees*
Advanced Coatings & Surface Engineering Laboratory, Colorado School of Mines (ACSEL), 1500 Illinois Street, Golden, CO 80401, USA
* Hiden Analytical Ltd, 420 Europa Boulevard, Warrington, WA5 7UN, UK
Materials Society Annual Meeting, Seattle, Feb 2002, published in Conference Proceedings (TMS)3
 
B38 Characterisation of DC unbalanced magnetron deposition of Ni/C : H composite films
Michael Zeuner*, Horst Neumann*, Jan Zalman, Danka Slavinska & Hynek Biederman
*Institute of Surface Modification, Permoserstraße 15, D-04318 Leipzig, Germany
Charles University Prague, Faculty of Mathematics & Physics, 180 00 Praha 8, Czech Republic
 
B39 Sputter process diagnostics by negative ions
Michael Zeuner*, Horst Neumann*, Jan Zalman, Danka Slavinska & Hynek Biederman
*Institute of Surface Modification, Permoserstraße 15, D-04318 Leipzig, Germany
Charles University Prague, Faculty of Mathematics & Physics, 180 00 Praha 8, Czech Republic
 

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