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Plasma
Diagnostics
Some Published Papers
Applications of the Hiden EQP
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DEPOSITION
STUDIES
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| B1 |
Properties of GeH4 (SiH4)
plasma for deposition of device-quality (a-Si:iH) material
W. Kaspera, R. Plättnera, J. Eichmeierb
aSiemens AG, Corporate Research and Development, Munich.
bTechnical University, Munich.
Journal of Non-Crystalline Solids, 1990. |
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| B2 |
Negative ion mass spectra
and particulate formation in RF silane plasma deposition experiments
A.A. Howling, J.L. Dorier, Ch. Hollenstein.
Centre de Recherches en Physique des Plasmas , Ecole Polytechnique
Federale de Lausanne,
Av des Bains 21, 1007 Lausanne, Switzerland.
Appl. Phys. Letters. Vol 62, page 1341, 1993. |
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| B3 |
Properties of very high
frequency plasmas related to technological aspects of amorphous silicon
deposition
Ch. Hollenstein, U Kroll*, AA Howling, J Dutta*, J-L Dorier, J. Meier,
R Tscharner*, A Shah*
Centre de Recherches en Physique des Plasmas, Ecole Polytechnique
Federale de Lausanne, 21
Av. des Bains, CH-1007 Lausanne, Switzerland.
*Institute de Microtechnique, Universite de Neuchantel, 2 Rue Brequet,
CH-2000 Neuchantel, Switzerland.
Presented at 11th EC Photovoltaic Solar Energy Conference, Montreux. |
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| B4 |
Negative hydrogenated silicon ion
clusters as particle precursors in RF silane plasma deposition experiments
A.A. Howling, L. Sansonnens, J-L. Dorier, Ch. Hollenstein.
Centre de Recherches en Physique des Plasmas, Ecole Polytechnique
Federale de Lausanne,
Avenue des Bains 21, CH-1007 Lausanne, Switzerland.
J. Phys D. Appl. Phys. 26 (1993) 1003-1006. |
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| B5 |
Diagnostics of particle genesis and
growth in RF silane plasmas by ion mass spectrometry and light scattering
Ch. Hollenstein, J-L. Dorier, J. Dutta, L. Sansonnens, A.A. Howling
Centre de Recherches en Physique des Plasmas, Ecole Polytechnique
Federale de Lausanne,
Avenue des Bains 21, CH-1007 Lausanne, Switzerland
Plasma Sources Science & Technology 3 (1994) 278-286 |
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| B6 |
Time-resolved measurements
of highly polymerized negative ions in radio frequency silane plasma
deposition experiments
A.A. Howling, L. Sansonnens, J.-L. Dorier and Ch. Hollenstein
Centre de Recherches en Physique des Plasmas, Ecole Polytechnique
Fédérale de Lausanne,
Avenue des Bains 21, CH-1007 Lausanne, Switzerland
J. Appl. Phys. 75 (3). 1 February, 1994 |
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| B7 |
In situ mass spectrometry
study of plasmas for amorphous silicon deposition
W.G.J.H.M. van Sark, J. Bezemer, M. Kars, M. Kuiper, E.A.G. Hamers
and W.F. van der Weg
Utrecht University, Debye Institute, Dept of Atomic and Interface
Physics, PO Box 80000, 3508 TA Utrecht, The Netherlands
Presented at the 12th European Photovoltaic Solar Energy Conference,
April 11-15, 1994, Amsterdam, The Netherlands |
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| B8 |
Mass spectrometry detection
of SiHm and CHm radicals from SiH4-CH4-H2
RF discharges in high temperature deposition conditions of silicon
carbide
Patrick Kae-Nune, Jérôme Perrin, Jean Guillon and Jacques
Jolly
Laboratoire PRIAM, CNRS-ONERA UMR No 9927, Fort de Palaiseau, Bâtiment
S,
F-91120 Palaiseau, France
To appear in J.J.A.P. |
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| B9 |
Gas phase species in a
silane/oxygen, helicon deposition plasma
Gareth John Williams
Plama Reserach Laboratory, The Australian National University, Canberra,
ACT 0200
November 1993 |
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| B10 |
On the ion energy transfer
to the substrate during titanium deposition in a hollow cathode arc
discharge
aH. Kersten, aH. Steffen, bD. Vender,
aH-E. Wagner
aE.-M.-Arndt-University, Department of Physics, Domstr.
10a 17487 Grifswald, F.R.G.
bTU Eindhoven, Department of Physics, PO Box 513, 5600
MB Eindhoven, The Netherlands
Vacuum, volume 46, number 3, pages 305 to 308, 1995
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| B11 |
Effect of wall charging
on an oxygen plasma created in a helicon diffusion reactor used for
silica deposition
C. Charles & R. W. Boswell
Plasma Research Laboratory, Research School of Physical Sciences &
Engineering,
Australian National University, ACT 0200, Australia
JVST A, volume 13, number 4, July/August 1995 |
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| B12 |
Ion kinetic aspects of plasma chemical
deposition of PMMA (Polymethylmethacrylate) films
Michael Zeuner, Jürgen Meichsner
Technische Universität Chemnitz, Institut für Physik, D-09107
Chemnitz, Germany
Vacuum, Volume 4, Number 1, Pages 27 to 31, 1995 |
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| B13 |
The role of cations in
low power radio frequency plasmas of propenoic acid
A. J. Beck, L. O'Toole, R. D. Short, *A. P. Ameen & F. R. Jones
Laboratory for Surface & Interface Analysis, Dept. of Engineering
Materials, P.O. Box 600, Sir Robert Hadfield Building, Mappin Street,
Sheffield, S1 4DU
J. Chem. Soc., Chem. Commun., 1995, pages 1053 to1054 |
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| B14 |
Mass spectrometry of
& deposition-rate measurements from radiofrequency-induced plasmas
of methyl isobutyrate, methyl methacrylate n-butyl methacrylate
Liam O'Toole, Robert D. Short, *Amir P. Ameen & Frank R.
Jones
University of Sheffield, Dept. of Engineering Materials, Laboratory
for Surface & Interface Analysis, P.O. Box 600, Sheffield, S1
4DIU
J. Chem. Soc. Faraday Trans, 1995 91(9), pages 1363
to1370 |
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| B15 |
Mass spectrometry detection
of radicals in SiH4-CH4-CH2 glow
discharge plasmas
Patrick Kae-Nune, Jérôme Perrin, Jean Guillon and
Jacques Jolly
Laboratoire PRIAM, Unité Mixte de Recherche CNRS-ONERA, Fort
de Palaiseau,
Bâtiment S, 91120 Palaiseau, France
Plasma Sources Science & Technology, Volume 4, Number
2, Pages 250 to 259, May 1995 |
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| B16 |
Surface recombination
probabilities of H on stainless steel, a-Si:H and oxidized silicon
determined by threshold ionization mass spectromentry in H2
RD discharges
Patrick Kae-Nune, Jérômoe Perrin, Jacques Jolly *, Jean
Guillon
Laboratoire PRIAM, Unité Mixte de Recherche CNRS-ONERA no.
9927, Fort de Palaiseau,
Bât.S, F-91120 Palaiseau, France
Received 5 March 1996; accepted for publication 2 April 1996 |
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| B17 |
Mass spectral investigation
of the radio-frequency plasma deposition of hexamethyldisiloxane
M.R. Alexander, F.R. Jones, R.D. Short
Department of Engineering Materials, Laboratory for Surface &
Interface Analysis, University of
Sheffield, Sir Robert Hadfield Building, Mappin Street, Sheffield,
S1 4DU, UK
1997 American Chemical Society - S1089-5647(97)00663-9 |
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| B18 |
On the plasma polymerisation
of allyl alcohol: an investigation of ion-molecule reactions using
a selected ion flow tube
Liam O'Toolea, Christopher A. Mayhewa,
Robert D. Shortb
aUniversity of Birmingham, School of Space Research, Chemical Physics
Group, Edgbaston, Birmingham, B15 2TT.
bUniversity of Sheffield, Department of Engineering Materials, Laboratory
for Surface & Interface
Analysis, Sir Robert Hadfield Building, Mappin Street, Sheffield,
SK1 3JD.
J. Chem. Soc., Faraday Trans., 1997, 93(10), 1961-1964 |
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| B19 |
An investigation of the
mechanisms of plasma polymerisation of allyl alcohol
Laim O'Toole, Robert D. Short
University of Sheffield, Department of Engineering Materials, Laboratory
for Surface & Interface
Analysis, Sir Robert Hadfield Building, Mappin Street, Sheffield,
SK1 3JD.
J. Chem. Soc., Faraday Trans., 1997, 93(6), 1141-1145 |
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| B20 |
Surface reaction kinetics
of CH3 in CH4 RF discharge studied by time-resolved
threshold ionization mass spectrometry
Masaharu Shiratani 1,2, Jacques Jolly1,
Hervé Videlot1 and Jérôme Perrin1,3
1Laboratoire PRIAM, Unité Mixte de Recherche CNRS-ONERA,
Fort de Palaiseau, F-91761 Palaiseau Cedex, France.
2Graduate School of Information Science & Electrical
Engineering, Kyushu University, Hakozaki, Fukuoka 812-81, Japan.
3Balzers Process Systesm, 5 rue Léon Blum, Z.I.
Les Glaises, F-91124 Palaiseau Cedex, France.
Jpn. J. Appl. Phys. Vol 36 (1997) pp. 4752-4755 Part
1, No. 7B, July 1997. |
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| B21 |
The substrate-process interface in
thin barrier film coating
C Bichler, M Bischoff, H C Langowski & U Moosheimer
Fraunhofer-Institute for Technology & Packing, Germany
1996 Society of Vacuum Coaters 505/856 - 7188 |
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| B22 |
Effects of the axial external magnetic
field on the reduction of the dielectric window damage due to capacitive
coupling in the inductively coupled plasma
Jung-Hun Kim, Ho-Jun Lee, Youn-Taeg Kim & Ki-Woong Whang
School of Electrical Engineering, Seoul National University, Kwanak-ku,
Shinlin-dong San 56-1, Seoul, Korea
Jung-Hoon Joo
Dept. of Materials Science & Engineering, Kunsan National University,
Miryongdong San 69-1,
Kunsan, Korea
J. Vac. Sci. Technol. A 15(3) May/June 1997 |
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| B23 |
Investigation of stored
energy in plasma deposited TiNx films
H Wulff
Institute of Physical Chemistry, University of Greifswald, Soldtmannstrasse
23, D-17489 Greifswald, Germany
C Eggs
Institute of Physics, University of Greifswald, D-17489 Greifswald,
Germany
J. Vac. Sci. Technol. A 15(6), Nov/Dec 1997 |
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| B24 |
Hydrogen poor cationic
silicon clusters in an expanding argon-hydrogen-silane plasma
W M M Kessels, M C M van de Sanden & D C Schram
Department of Applied Physics, Eindhoven University of Technology,
PO Box 513, NL-5600 MB
Eindhoven, The Netherlands. |
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| B25 |
Structural properties of a-Si:H related
to ion energy distributions in VHF silane deposition plasmas
E A G Hamers, W G J H M van Sark, J Bezemer, H Meiling, W F van der
Weg
Debye Institute, Section Interface Physics, Utrecht University, PO
Box 80.000, NL-3508 TA Utrecht, The Netherlands
Journal of Non-Crystalline Solids 226(1998) 205-216.
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| B26 |
Mass spectrometric study
of the radio-frequency-induced plasma polymerisation of styrene &
propenoic acid
Alison J Beck, Frank R Jones & Robert D Short
University of Sheffield, Department of Engineering Materials, Laboratory
for Interface Analysis,
Sir Robert Hadfield Building, Mappin Street, Sheffield, S1 3JD
J. Chem. Soc., Faraday Trans., 1998, 94(4), 559-565 |
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| B27 |
Surface reaction probabilities and
kinetics of H, SiH3, Si2H5, CH3,
and C2H5 during deposition of a-Si:H and a-C:H
from H2, SiH4, and CH4 discharges
Jérôme Perrin. Masaharu Shiratani, Patrick Kae-Nune,
Hervé Videlot, Jacques Jolly & Jean Guillon
Laboratoire PRIAM, Unité Mixte de Recherche CNRS-ONERA, Fort
de Palaiseau, F-91761 Palaiseau Cedex, France
J. Vac. Sci. Technol. A 16(1), Jan/Feb 1998, 278-289 |
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| B28 |
Ion flux and deposition
rate measurements in the RF continuous wave plasma polymerisation
of acrylic acid
A J Beck, R M France, A M Leeson, R D Short, A Goodyear*, N St.
J Braithwaite*
Department of Engineering Materials, Laboratory for Surface &
Interface Analysis, University of
Sheffield, Sheffield, S1 3JD.
*The Open University, Oxford Research Unit, Foxcombe Hall, Berkeley
Road, Boars Hill, Oxford, OX1 5HR
Chem. Commun., 1998, 1221-1222 |
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| B29 |
Effects of "processing
parameters" in plasma deposition: Acrylic acid revisited
Sennur Canda, Alison J Beck, Liam O'Toole & Robert D Short
Department of Engineering Materials, Laboratory for Surface &
Interface Analysis, University of Sheffield, Sir Robert Hadfield Building,
Sheffield. S1 3JD
J. Vac. Sci. Technol. A 16(3), May/June 1998, 1702-1709 |
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| B30 |
Gas-phase esterification
during plasma polymerization of propanoic acid and 1-propanol
Alison J Beck & Robert D Short
Laboratory for Surface & Interface Analysis, Department of Engineering
Materials, University of Sheffield, Sir Robert Hadfield Building,
Mappin Street, Sheffield. S1 3JD
J. Vac. Sci. Technol. A 16(5), Sep/Oct 1998, 3131-3133 |
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| B31 |
Formation of large positive
silicon-cluster ions in a remote silane plasma
W M M Kessels, C M Leewis, A Lerous, M C M van de Sanden &
D C Schram
Department of Applied Physics, Eindhoven University of Technology,
PO Box 513, NL-5600 MB Eindhoven, The Netherlands
Presented at The American Vacuum Society 45th International Symposium,
Nov 2-6, 1998 Baltimore
Submitted to Journal of Vacuum Science and Technology |
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| B32 |
Organic films prepared
by polymer sputtering
Hynek Biederman
Department of Macromolecular Physics, Charles University, Faculty
of Mathematics & Physics, 1800 Prague 8, Czech Republic
J. Vac. Sci. Technol. A 18(4), July/Aug 2000, 1642-1648 |
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| B33 |
Cavity ring down detection
of SiH3 in a remote SiH4 plasma and comparison
with model calculations and mass spectrometry
W M M Kessels, A Leroux, M G H Boogaarts, J P M Hoefnagels, M
C M van de Sanden & D C Schram
Department of Applied Physics, Eindhoven University of Technology,
PO Box 513, NL-5600 MB Eindhoven, The Netherlands
Submitted to Journal of Vacuum Science and Technology(A) |
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| B34 |
Direct electrical control
of diamond-like carbon growth by plasma-enhanced CVD
A A Goruppa, N St J Braithwaite & D M Grant*
Oxford Research Unit, The Open University, Boars Hill, Oxford, OX1
5HR, UK
*Department of Materials Engineering & Design, Nottingham University,
NG7 2RD, UKs
Presented at Diamond Films 93, Albufeira, September 20-24, 1993 |
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| B35 |
Formation of cationic
silicon clusters in a remote silane plasma and their contribution
to hydrogenated amorphous silicon film growth
W M M Kessels, C M Leewis, M C M van de Sanden, & D C Schram
Department of Applied Physics, Eindhoven University of Technology,
PO Box 513, NL-5600 MB Eindhoven, The Netherlands
Journal of Applied Physics, Volume 86, Number 7, 1 October,
1999 |
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| B36 |
Sheath thickness in very-high-frequency
plasma chemical vapor deposition of hydrogenated amorphous silicon
W G J H M van Sark, H Meiling, E A G Hamers, J Bezemer &
W F van der Weg
Department of Atomic & Interface Physics, Debye Institute, Utrecht
University, PO Box 80000, NL-3508 TA Utrecht, The Netherlands
J. Vac. Sci. Technol. A 18(3), May/June 1997 |
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| B37 |
The influence of particle
energy distributions on the microstructure and properties of reactively
sputtered titanium oxide and titanium nitride thin films
C. Muratore, J J Moore & J A Rees*
Advanced Coatings & Surface Engineering Laboratory, Colorado School
of Mines (ACSEL), 1500 Illinois Street, Golden, CO 80401, USA
* Hiden Analytical Ltd, 420 Europa Boulevard, Warrington, WA5 7UN,
UK
Materials Society Annual Meeting, Seattle, Feb 2002, published in
Conference Proceedings (TMS)3 |
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| B38 |
Characterisation of DC
unbalanced magnetron deposition of Ni/C : H composite films
Michael Zeuner*, Horst Neumann*, Jan Zalman, Danka Slavinska
& Hynek Biederman
*Institute of Surface Modification, Permoserstraße 15, D-04318
Leipzig, Germany
Charles University Prague, Faculty of Mathematics & Physics, 180
00 Praha 8, Czech Republic |
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| B39 |
Sputter process diagnostics
by negative ions
Michael Zeuner*, Horst Neumann*, Jan Zalman, Danka Slavinska
& Hynek Biederman
*Institute of Surface Modification, Permoserstraße 15, D-04318
Leipzig, Germany
Charles University Prague, Faculty of Mathematics & Physics, 180
00 Praha 8, Czech Republic |
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EQP details
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