Semiconductor Etch Optimisation
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Discover Etch Process Optimisation and SIMS-based End Point Detection Solutions
Modern semiconductor manufacturing involves complex semiconductor etching steps to carve nanometer-scale features into multi-layer thin films—and precision is paramount.
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In processes like plasma etching and ion beam etching, removing one material layer while stopping exactly at the next layer is critical to device performance and yield. Achieving this level of control requires advanced monitoring of the etch process. One key challenge is end point detection (EPD): determining the exact moment an etch has reached a specific layer or interface. Robust EPD ensures processes are carefully controlled and consistent, yielding repeatable results wafer-to-wafer and batch-to-batch. Without accurate end point control, over-etching can damage underlying layers, while under-etching can leave residues, both affecting device quality.
A few angstroms of over-etch or under-etch can make a big difference in multi-layer device fabrication (i.e. magnetic thin films or high-speed logic stacks). Advanced EPD systems – particularly SIMS-based end point detectors – detect subtle changes in etch by-products or surface conditions to signal when to stop the process. Alternative industry techniques, like optical emission and laser interferometry, may falter if the layer of interest has no distinct optical signature or if only a very small area is being etched. Mass spectrometry, thus, offers a powerful advantage. By directly sensing the composition of the etched species, a mass spectrometer-based EPD can identify material transitions in real time.
Secondary ion mass spectrometry (SIMS) is one of the most sensitive surface analysis techniques for this application, with the capability for detecting when an etch reaches the exact layer of interest. With a SIMS-based EPD integrated in-situ, an ion beam etch process can remove one material and stop immediately as the next layer begins. This high sensitivity and selectivity is invaluable for etching complex stacks where each layer’s composition must be preserved, providing a potent means of semiconductor etching process optimisation.
