Threshold ionization mass spectrometry (TIMS) has been used to measure the excited molecular oxygen states O2 (1g) and O2 (1+g ) during plasma-assisted chemical vapour deposition of tin oxide (SnO2) thin films. The latter, composed of nanosized features, was deposited by feeding in a mixture of Ar, O2 and tetramethyltin (Sn(CH3)4 or TMT) in a capacitively coupled RF discharge reactor.
Threshold ionization mass spectrometry of reactive species in remote Ar/C2H2expanding thermal plasma.
The surface loss coefficients of CFx (x51 – 3) and F radicals have been measured on the stainless steel walls of the differential pumping systems of a plasma reactor. This measurement is made by comparing the beam to background signal ratio of the radicals measured by appearance potential mass spectrometry.
Study on polymeric neutral species in high-density fluorocarbon plasmas.
In discharge dentrification, radical production by electron collision with combustion gas is a key process which determines the dentrification process and its performance. In this study N, O, OH and H radical densities have been measured by appearance mass spectrometry in a low-pressure discharge field with parallel electrodes (2cm gap) under simulated combustion gas flow.
A radical beam source for methyl radicals (CH3) was characterized applying ionization-threshold mass spectrometry. The beam source is based on thermal dissociation of methane (CH4) or azomethane (N2~CH3!2! in a heated tungsten capillary. A flux of (361)31013 cm22 s21 CH3 radicals is produced using methane as precursor gas and a capillary temperature of 1650 K.
Plasma diagnostic study of silicon nitride film growth in a remote Ar–H2–N2–SiH4 plasma: Role of N and SiHn radicals.
Near-surface generation of negative ions in low-pressure discharges
Measurement of absolute radical densities in plasma using modulated-beam line-of-sight TIMS