Category: SIMS

Towards an understanding of MCs⁺_n formation mechanism in SIMS.

Surface Analysis under Ambient Conditions Using Plasma-Assisted Desorption/Ionization Mass Spectrometry.

Surface analysis by secondary-ion mass spectroscopy during etching with gas-cluster ion beam.

Sputter depth profiling by secondary ion mass spectrometry coupled with sample current measurements.

Preparation and Characterization of Antimony-Doped Tin Dioxide Electrodes. 3. XPS and SIMS Characterization.

Preferential Oxygen-Trapping in Metallic Multilayers: A SIMS Perspective.

Plasma implanted ultra shallow junction boron depth profiles: Effect of plasma chemistry and sheath conditions.

Mass-resolved ion scattering spectrometry for characterization of samples with historical value.

Interfacial diffusion in a double quantum well structure.