Towards an understanding of MCs+n formation mechanism in SIMS.
Surface Analysis under Ambient Conditions Using Plasma-Assisted Desorption/Ionization Mass Spectrometry.
Surface analysis by secondary-ion mass spectroscopy during etching with gas-cluster ion beam.
Sputter depth profiling by secondary ion mass spectrometry coupled with sample current measurements.
Preparation and Characterization of Antimony-Doped Tin Dioxide Electrodes. 3. XPS and SIMS Characterization.
Preferential Oxygen-Trapping in Metallic Multilayers: A SIMS Perspective.
Plasma implanted ultra shallow junction boron depth profiles: Effect of plasma chemistry and sheath conditions.
Mass-resolved ion scattering spectrometry for characterization of samples with historical value.
Interfacial diffusion in a double quantum well structure.