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Interlayer detector for ion beam milling processes

The Ion Beam Milling ion-etching process is vacuum based and is dependent on precise identification of interlayer breakthrough through multiple stacked thin-film layers each of perhaps only a few Angstrom thick . The Hiden IMP-EPD end point detector system is used routinely for monitoring and control of the total etching process. The system directly monitors the surface ions generated in the etching process, identifying the species present, their relative abundances and precisely defining the interlayer boundary to just 2.5 Angstrom. Species with molecular weights up to 300amu are determined.