for Thin Films, Plasma and Surface Engineering

HPR-30

A residual gas analyser for vacuum process analysis

Measures the vacuum process gas composition, contamination and leak detection
Mass range 200, 300 or 510 amu
Measures vacuum process gas composition Yes
Measures contamination and leak detection Yes
Minimum detectable concentration 5 PPB
Sample inlet pressure (Standard) 10-3  to 5 mbar
Sample inlet pressure (Optional) < 10-4 mbar
Fast measurement speed Up to 500 measurements per second

EQP

For the analysis of positive and negative ions, neutrals, and radicals from plasma processes

Measures mass spectra and energy distributions of ions, neutrals and radicals in plasma
Mass range 300, 510, or 1000 amu
Ion analysis Positive and negative ions
Neutrals analysis Neutrals and neutral radicals
Plasma pressure (standard) Up to 0.5 mbar
Plasma pressure (options) Up to 2 mbar, 100 mbar and Atmospheric pressure
Sampling options DC and RF biased sampling electrodes
Energy analysis range 100 eV or 1000 eV

PSM

A mass and energy analyser for plasma diagnostics

Measures mass spectra of ions, neutrals and radicals in plasma
Mass range 300 or 510 amu
Ion Analysis Positive ions
Ion Analysis – option Negative ions
Neutral analysis Neutrals and neutral radicals analysis
Plasma pressure Up to 0.5 mbar
Energy analysis range 100 eV

ESPion

An advanced Langmuir probe for plasma diagnostics

Measures electrical properties of low pressure plasma
Plasma types For DC, RF, pulsed or ECR
Ion and electron density 1014 – 1019 m3
Electron temperature Up to 10 eV
Plasma pressure Up to 0.5 mbar
Z- motion drive option 300, 600 or 900 mm

XBS

A system for multiple source monitoring in MBE deposition applications

For molecular beam analysis and deposition rate control
Mass range 320 or 510 amu
Growth rate determination < 0.01 Angstrom per second, species dependant
Cross beam ion source acceptance +/-35o Beam apertures – 3D modelled
Data output Real time analogue signal outputs
Residual gas analysis mode- RGA Leak detection and chamber vacuum analysis

IMP-EPD

A system for ion etch control and optimum process quality

End Point detection for ion beam and plasma etch processes
Mass range 300 or 510 amu
Multi layer stack monitoring End point to +/- 5 Angstrom
High sensitivity Operates with 99.9% masked wafers
Automated Tool integrated automation recipes
Layer counting Yes
End point on selected interface Yes
End point within multi-layered stack Yes
Residual gas analysis mode – RGA Leak detection and chamber vacuum analysis

TPD Workstation

A system for UHV temperature programmed desorption (TPD/TDS) studies

Measures the desorption products from thin films and solid samples
Mass range 50, 200, 300 or 510 amu
Mass Spectrometer Triple Filter Quadrupole
Detector Pulse Ion Counter (PIC)
Sample size Typically 10 x 10 mm
Minimum detectable pressure 5 x 10-15 mbar
Maximum operating pressure 5 x 10- 6 mbar
Maximum sample stage temperature 1000 °C
Fast measurement speed Up to 500 measurements per second

SIMS/SNMS Workstation

A design breakthrough for surface analysis

For fast and easy characterisation of layer structures, surface contamination and impurities
Mass range 300, 510 or 1000 amu
Minimum detectable concentration PPM/PPB level contamination analysis
SIMS – Secondary Ion Mass Spectrometry Yes
Analysis of ions ejected from sample surface Yes (primary ions of oxygen, argon or caesium)
SNMS – Secondary Neutral Mass Spectrometry Yes
Analysis of ions ejected from sample surface Yes (primary ions of oxygen, argon or caesium)
Depth resolution +/- 5 nanometer
Minimum detectable concentration – SIMS 1016 atoms per cubic centimeter – species dependen
Minimum detectable concentration – SNMS 0.01% – species dependant
UHV multiport chamber Yes
Accommodates additional instrumentation Yes (E.g. XPS)

Compact SIMS

A UHV surface analysis system for thin film depth profiling

Measures the surface composition of the first few nanometers and/or micrometers depth of solid samples
Mass range 50, 300, 510 amu
Minimum detectable concentration ppm
SIMS – Secondary Ion Mass Spectrometry Yes
Analysis of ions ejected from sample surface Yes positive ions (negative ion option)
SNMS – Secondary Neutral Mass Spectrometry Yes – Option
Depth resolution 3 nm
Minimum detectable concentration – Boron in Si 1017 atoms cm-3
Minimum detectable concentration – SNMS 1%
UHV multiport chamber No, fixed geometry easy entry chamber
Accommodates additional instrumentation No
Sample movement Manual

AutoSIMS

Automatic Surface Analysis System

Measures the surface composition of the first few nanometers and/or micrometers depth of solid samples
Mass range 50, 300, 510 amu
Minimum detectable concentration ppm
SIMS – Secondary Ion Mass Spectrometry Yes
Analysis of ions ejected from sample surface Yes positive ions (negative ion option)
SNMS – Secondary Neutral Mass Spectrometry Yes – Option
Depth resolution 3 nm
Minimum detectable concentration – Boron in Si 1017 atoms cm-3
Minimum detectable concentration – SNMS 1%
UHV multiport chamber No, fixed geometry easy entry chamber
Accommodates additional instrumentation No
Sample movement Automatic X, Y

EQS

A SIMS analyser

When used in a SIMS or FIB-SEM system – provides for surface composition analysis and elemental mapping
Mass range 300, 510 or 1000 amu
Ion analysis Positive and negative ions
Ion energy analysis 100eV, 1000eV option,
Sensitivity > 106 counts/second per nanoamp for Aluminium
Residual gas analysis mode- RGA Leak detection and chamber vacuum analysis
SIMS – Secondary Ion Mass Spectrometry Yes
Analysis of ions ejected from sample surface Yes (primary ions of oxygen, argon or caesium)
FIB-SEM microscopy SIMS Yes
Fine-focus electron beam microscope compatible Yes (E.g. FIB-SEM – Zeiss Auriga 60)

MAXIM

A SIMS/SNMS analyser

When used in SIMS/SNMS system- provides for surface composition and elemental mapping
Mass range 300, 510 or 1000 amu
Ion analysis Positive and negative ions
Ion energy analysis 100 eV
Sensitivity > 106 counts/second per nanoamp for Aluminium
SIMS – Secondary Ion Mass Spectrometry Yes
Analysis of ions ejected from sample surface Yes (primary ions of oxygen, argon or caesium)
SNMS – Secondary Neutral Mass Spectrometry Yes
Analysis of ions ejected from sample surface Yes (primary ions of oxygen, argon or caesium)
Residual gas analysis mode- RGA Leak detection and chamber vacuum analysis

IG5C

A 5 KeV Caesium ion gun for UHV surface analysis applications

Primary ion source for SIMS/SNMS analysis and elemental mapping of electronegative species
Primary ion Cs+
Ion energy 0.5 to 5.0 KeV
Minimum spot diameter 20 micrometers
Deflection field for mapping +/- 4 millimeters
Ion beam current 0.1 to 150 nA
Maximum Etch Rate 30 nm/min for a silicon target

IG20

A 5 KeV Argon or Oxygen ion source for UHV surface analysis applications

Primary ion source for SIMS/SNMS analysis and elemental mapping of electropositive species
Primary ion Oxygen, Argon, Xenon
Ion energy .5 to 5 KeV
Minimum spot size (elemental mapping) 50 micrometers
Minimum spot size (depth profiling) 100 micrometers
Deflection field for mapping +/- 4 millimeters
Ion beam current 1.0 to 800 nanoamperes
Typical fast etch rate- Si (5 KeV Ar 600nA) 50 nanometers per second, 450um X 650um crater