Plasma Etching and ALE
Atomic Layer Etching (ALE) is a two-step process which allows for reliable single atomic layer precision of the etch. The first step is to form a reactive layer on the substrate. The second step then removes this layer, and the underlying substrate layer, in a self-limiting manner. For the second step to be self-limited it is critical that the ion energy is higher than the sputtering threshold of the reactive layer but below that of the substrate layer.
Radical and ion fluxes are also important for the formation of the reactive layer.
IEDs as a function of pressure in 1000W Ar.
CF radical densities measured using a QMS during one cycle of ALE at 100W and 300W of (a) CF (b) CF2 (c) CF3; (d) C2F4 and (e) F
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