for Surface Analysis

Compact SIMS

A UHV surface analysis system for thin film depth profiling

Measures the surface composition of the first few nanometers and/or micrometers depth of solid samples
Mass range 50, 300, 510 amu
Minimum detectable concentration ppm
SIMS – Secondary Ion Mass Spectrometry Yes
Analysis of ions ejected from sample surface Yes positive ions (negative ion option)
SNMS – Secondary Neutral Mass Spectrometry Yes – Option
Depth resolution 3 nm
Minimum detectable concentration – Boron in Si 1017 atoms cm-3
Minimum detectable concentration – SNMS 1%
UHV multiport chamber No, fixed geometry easy entry chamber
Accommodates additional instrumentation No
Sample movement Manual

AutoSIMS

Automatic Surface Analysis System

Measures the surface composition of the first few nanometers and/or micrometers depth of solid samples
Mass range 50, 300, 510 amu
Minimum detectable concentration ppm
SIMS – Secondary Ion Mass Spectrometry Yes
Analysis of ions ejected from sample surface Yes positive ions (negative ion option)
SNMS – Secondary Neutral Mass Spectrometry Yes – Option
Depth resolution 3 nm
Minimum detectable concentration – Boron in Si 1017 atoms cm-3
Minimum detectable concentration – SNMS 1%
UHV multiport chamber No, fixed geometry easy entry chamber
Accommodates additional instrumentation No
Sample movement Automatic X, Y

SIMS/SNMS Workstation

A design breakthrough for surface analysis

For fast and easy characterisation of layer structures, surface contamination and impurities
Mass range 300, 510 or 1000 amu
Minimum detectable concentration PPM/PPB level contamination analysis
SIMS – Secondary Ion Mass Spectrometry Yes
Analysis of ions ejected from sample surface Yes (primary ions of oxygen, argon or caesium)
SNMS – Secondary Neutral Mass Spectrometry Yes
Analysis of ions ejected from sample surface Yes (primary ions of oxygen, argon or caesium)
Depth resolution +/- 5 nanometer
Minimum detectable concentration – SIMS 1016 atoms per cubic centimeter – species dependent
Minimum detectable concentration – SNMS 0.01% – species dependant
UHV multiport chamber Yes
Accommodates additional instrumentation Yes (E.g. XPS)

EQS

A SIMS analyser

When used in a SIMS or FIB-SEM system – provides for surface composition analysis and elemental mapping
Mass range 300, 510 or 1000 amu
Ion analysis Positive and negative ions
Ion energy analysis 100eV, 1000eV option,
Sensitivity > 106 counts/second per nanoamp for Aluminium
Residual gas analysis mode- RGA Leak detection and chamber vacuum analysis
SIMS – Secondary Ion Mass Spectrometry Yes
Analysis of ions ejected from sample surface Yes (primary ions of oxygen, argon or caesium)
FIB-SEM microscopy SIMS Yes
Fine-focus electron beam microscope compatible Yes (E.g. FIB-SEM – Zeiss Auriga 60)

MAXIM

A SIMS/SNMS analyser

When used in SIMS/SNMS system- provides for surface composition and elemental mapping
Mass range 300, 510 or 1000 amu
Ion analysis Positive and negative ions
Ion energy analysis 100 eV
Sensitivity > 106 counts/second per nanoamp for Aluminium
SIMS – Secondary Ion Mass Spectrometry Yes
Analysis of ions ejected from sample surface Yes (primary ions of oxygen, argon or caesium)
SNMS – Secondary Neutral Mass Spectrometry Yes
Analysis of ions ejected from sample surface Yes (primary ions of oxygen, argon or caesium)
Residual gas analysis mode- RGA Leak detection and chamber vacuum analysis

IG5C

A 5 KeV Caesium ion gun for UHV surface analysis applications

Primary ion source for SIMS/SNMS analysis and elemental mapping of electronegative species
Primary ion Cs+
Ion energy 0.5 to 5.0 KeV
Minimum spot diameter 20 micrometers
Deflection field for mapping +/- 4 millimeters
Ion beam current 0.1 to 150 nA
Maximum Etch Rate 30 nm/min for a silicon target

IG20

A 5 KeV Argon or Oxygen ion source for UHV surface analysis applications

Primary ion source for SIMS/SNMS analysis and elemental mapping of electropositive species
Primary ion Oxygen, Argon, Xenon
Ion energy 0.5 to 5 KeV
Minimum spot size (elemental mapping) 50 micrometers
Minimum spot size (depth profiling) 100 micrometers
Deflection field for mapping +/- 4 millimeters
Ion beam current 1.0 to 800 nanoamperes
Typical fast etch rate- Si (5 KeV Ar 600nA) 50 nanometers per second, 450um X 650um crater