fbpx
Select Page

Dependence of SiO2 etch rate on sidewall angle as affected by bottom materials in a high-density CHF3 plasma.

Aug 25, 2016

[featured_image]
Download
Download is available until [expire_date]
  • Version
  • Download 31
  • File Size 270.67 KB
  • File Count 1
  • Create Date August 25, 2016
  • Last Updated August 25, 2016

Dependence of SiO2 etch rate on sidewall angle as affected by bottom materials in a high-density CHF3 plasma.

Dependence of SiO2 etch rate on sidewall angle as affected by bottom materials in a high-density CHF3 plasma.