Plasma Enhanced Atomic Layer Deposition (PEALD)
Plasma Enhanced Atomic Layer Deposition (PEALD) represents a cutting-edge technique for creating ultra-thin, highly uniform coatings of materials such as Titanium Nitride (TiN).
TiN coatings are widely recognized for their hardness, chemical stability, and electrical properties, making them ideal for applications in microelectronics, wear-resistant coatings, and decorative finishes. The precise control of film properties offered by PEALD is critical for advancing these technologies.
Related Products
Understanding and controlling the plasma environment is crucial for optimizing PEALD processes. The plasma phase in PEALD directly impacts the growth rate, film density, and composition of the deposited layers. Detailed analysis of the ions, radicals, and neutrals present in the plasma allows for the fine-tuning of process parameters, leading to improved deposition outcomes and material properties.
Titanium Nitride Deposition Insights with the EQP Series
For Titanium Nitride (TiN) deposition, the EQP Series has proven invaluable. Key insights include:
- Ion Energy Distribution Analysis: Tailoring the ion energy allows for the control over film density and mechanical properties.
- Mass Spectra of Reactive Species: Identifying reactive radicals and their contribution to the film growth process enables the optimization of deposition conditions for enhanced film quality.
Applications and Benefits
The application of the Hiden EQP Series in TiN PEALD processes offers several benefits, including:
- Enhanced Film Quality: Improved control over film thickness, uniformity, and composition.
- Process Efficiency: Reduced trial-and-error in process development through real-time analysis.
- Innovation Enablement: Supports the development of new applications for TiN coatings by understanding and controlling the PEALD process at a fundamental level.
Time averaged mass spectrum from titanium nitride HiPIMS plasma
Learn More and Contact Us
Discover how the Hiden EQP Series can transform your PEALD processes for Titanium Nitride deposition and beyond. For more information and to discuss your specific application needs, contact our team of experts today.
Atmospheric Plasma Analysis by Molecular Beam MS – GEC 2004 (1.38 MB)
Atmospheric Pressure Plasma Analysis by Modulated Molecular Beam MS – ICPIG 2005 (256 KB)
Ion Energy Distributions for a DC Plasma – GEC 2003 (250 KB)
Mass Analysis of CF3I Decomposition in a Surface Barrier Discharge – GEC 2011 (2.8 MB)
Mass Spectroscopy of Metastable Species during Plasma Processing – GEC 2011 (2.1 MB)
Time Resolved Ionisation Studies of HIPIMS – PSE 2006 (848 KB)
