Plasma Etch in Microtechnology

In-situ SIMS analysers for real-time etch monitoring at the nanoscale

• Hiden SIMS plasma and ion beam etch analysers provide a window on the entire etch process
• End point control to within +/- 5 Angstroms
• Integrated ‘production ready’ end point control is available

Visit Product Page : IMP-EPD

 

IMP-EPD

 

High performance probe for mass and energy analysis for ions, radicals and neutrals from plasma

• +ve and –ve ion analysis
• Mass resolved ion energy analysis
• Neutrals and neutral radical analysis
• Energy resolved mass analysis
• Mass range options to 1000 amu
• Energy range options to 1000 eV

Visit Product Page : EQP

EQP

 

Advanced Langmuir probe for plasma diagnostics

• Floating Potential, V_f
• Plasma Potential, V_p
• Electron Energy Distribution Function, EEDF
• Debye length, λ_D
• Ion Flux, Γ_i
• Ion density, ni, and electron density, ne, over the range 10₁₄-10₁₉ m^-3
• Electron Temperature, Te, up to 10 eV
• Orbital Motion Limited (OML) and Allen Boyd Reynolds (ABR)

Visit Product Page : ESPion

ESPion

 

Vacuum process gas analysis / Residual gas analysis

• Pump-down Profiles
• Vacuum Diagnostics
• Base Pressure
• Residuals
• Backfill
• Bakeout
• Leak Checking

Visit Product Page : HPR-30

 

HPR-30 Cart

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