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Plasma Characterisation

plasma characterisation

For further information and pricing, please get in touch with us.

Plasma characterisation, plasma ion analysers and langmuir probes

Hiden plasma probes measure some of the key plasma parameters and provide detailed information relating to plasma reaction chemistry.

Overview

A wide range of industrial processes use electrical plasmas, and new applications are developing rapidly. In the microelectronics industry the demands of higher yields and shrinking device geometries mean that process reproducibility and understanding is vital.

Detailed understanding of the reaction kinetics of plasma ions and neutral species plays a key role in the development of advanced surface engineering processes such as HIPIMS.

Further Reading

Hiden EQP and PSM mass/energy analysers are offered with a range of standard sampling options to provide for plasma characterisation in a broad range of applications including :

ECR – Electron Cyclic Resonance

Electron Cyclotron Resonance plasma is used for chemical vapour deposition, CVD and etching in semiconductor processing. Magnetic shielding of the EQP and PSM Mass/Energy Analyser enables operation in the high magnetic field environment produced by the ECR plasma source. EQP Mass and energy analyser for plasma diagnostics PSM Series Advanced Plasma Sampling Mass Spectrometers

Magnetron Sputtering

Magnetron sputtering is for plasma vapour deposition and is available in DC and RF forms producing a range of thin films used in many industries including decorative coatings, hard disk drive platters , optoelectronics and solar cells.

High Power Impulse Magnetron Sputtering (HIPIMS)

Pulsed plasma provide high density plasma for adhesion enhancing pre-treatment of the substrate prior to coating deposition (substrate etching) and deposition of thin films with high microstructure density. Hiden’s data acquisition system provides for time resolved data acquisition across the plasma pulse providing mass resolved ion energy information for positive and negative ions.

Inductively Coupled Plasma (ICP) and RF Plasma

ICP and RF plasma are used for many applications including reactive ion etching of thin films. Hiden’s advanced Langmuir probe system, ESPion includes RF compensation circuits to enable operation and data collection from within the plasma RF environment. ESPion Advanced langmuir probe for plasma diagnostics.

Dielectric Barrier Discharge (DBD)

DBD plasma sources are widely used for surface modification at atmospheric plasma. Hiden’s HPR-60 molecular beam sampling system provides for mass and enrgy analysis of plasma ions, neutra

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High-energy ions and atoms sputtered and reflected from a magnetron source for deposition of magnetic thin films. 158.99 KB 13 downloads

High-energy ions and atoms sputtered and reflected from a magnetron source for deposition...
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Extraction of positive and negative ions from electron-beam-generated plasmas. 1.42 MB 8 downloads

Extraction of positive and negative ions from electron-beam-generated plasmas. ...
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Energetic ion bombardment of the grounded anode in pulsed DC-glow discharges. 549.04 KB 10 downloads

Energetic ion bombardment of the grounded anode in pulsed DC-glow discharges. ...
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Emission characteristics of F− ions into vacuum from CaF2. 547.73 KB 12 downloads

Emission characteristics of F− ions into vacuum from CaF2. ...
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Electron density and ion energy dependence on driving frequency in capacitively coupled argon plasmas. 211.21 KB 19 downloads

Electron density and ion energy dependence on driving frequency in capacitively coupled...
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Effects of atomic chlorine wall recombination: Comparison of a plasma chemistry model with experiment. 128.09 KB 13 downloads

Effects of atomic chlorine wall recombination: Comparison of a plasma chemistry model...
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Diagnostics of reactive RF plasmas. 144.01 KB 17 downloads

Diagnostics of reactive RF plasmas. ...
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Development and evaluation of highly efficient neutral beam source. 511.02 KB 11 downloads

Development and evaluation of highly efficient neutral beam source. ...
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Correlating ion energies and CF2 surface production during fluorocarbon plasma processing of silicon. 462.00 KB 12 downloads

Correlating ion energies and CF2 surface production during fluorocarbon plasma processing...