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Electronic materials

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Ion implantation and diffusion is used to deliver dopants into semiconductors, SIMS accurately measures the dopant concentration for process development and monitoring.

The examples below show quantified depth profiles in silicon substrates

Overview

Ion implantation and diffusion is used to deliver dopants into semiconductors, SIMS accurately measures the dopant
concentration for process development and monitoring.

The examples below show quantified depth profiles in silicon substrates.

Further Reading

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Interface-Dominated Growth of a Metastable Novel Alloy Phase 1.94 MB 41 downloads

Interface-dominated Growth of a Metastable Novel Alloy Phase. ...
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Instantaneous Surface Work Function Dependence of MCs+n Molecular Ion Emission Under... 1.94 MB 37 downloads

Instantaneous surface work function dependence of MCs+n molecular ion emission under...
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Optimisation of the connection between TA-MS systems together with improved data interpretation for TA-MS applications. 1.98 MB 42 downloads

Optimisation of the connection between TA-MS systems together with improved data...
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High-temperature oxidation of CrN/AlN multilayer coatings. 605.40 KB 32 downloads

High-temperature oxidation of CrN/AlN multilayer coatings. ...
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Formation of a tetragonal Cu3Au alloy at gold/copper interfaces. 1.94 MB 32 downloads

Formation of a tetragonal Cu3Au alloy at gold/copper interfaces. ...
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Evidence of multiple H+ ion desorption pathways with ESD of chemisorbed and multilayer water. 2.35 MB 37 downloads

Evidence of multiple H+ ion desorption pathways with ESD of chemisorbed and multilayer...
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Energetics of MCsn+ molecular ions emitted from Cs+ irradiated surfaces. 207.58 KB 37 downloads

Energetics of MCsn+ molecular ions emitted from Cs+ irradiated surfaces. ...
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End point detection in ion beam milling of YB2 Cu3 07 thin films. 4.15 MB 36 downloads

End point detection in ion beam milling of YB2 Cu3 07 thin films. ...
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Dependence of scattered ion yield on the incident energy: Ne+ on pure gallium and indium. 252.94 KB 36 downloads

Dependence of scattered ion yield on the incident energy: Ne+ on pure gallium and...