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Ion implantation and diffusion is used to deliver dopants into semiconductors, SIMS accurately measures the dopant concentration for process development and monitoring.
The examples below show quantified depth profiles in silicon substrates
FIB – SIMS | Focussed Ion Beam Secondary Ion Mass Spectrometry
Hiden Compact SIMS Mass Spectrometry in solid material
Hiden SIMS | Analytical Secondary Ion Mass Spectrometry Products
Low Energy Ne Scattering from Metal Surfaces using MARISS
High Five: UHV SIMS with Plasma Primary & Simultaneous Positive and Negative Secondary Ion Detection
What is SIMS Surface Analysis?
Contaminant Analysis with Hiden Surface Analyzers
What is Surface Interface Analysis?
Mass Spectrometers for Silicon Semiconductor Analysis
Surface Analysis Products from Hiden Analytical
How to Analyse the Top Nano Layers of a Material
Key Contaminant Analysis Techniques