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Electronic materials

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Ion implantation and diffusion is used to deliver dopants into semiconductors, SIMS accurately measures the dopant concentration for process development and monitoring.

The examples below show quantified depth profiles in silicon substrates

Overview

Ion implantation and diffusion is used to deliver dopants into semiconductors, SIMS accurately measures the dopant
concentration for process development and monitoring.

The examples below show quantified depth profiles in silicon substrates.