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Electronic materials

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Ion implantation and diffusion is used to deliver dopants into semiconductors, SIMS accurately measures the dopant concentration for process development and monitoring.

The examples below show quantified depth profiles in silicon substrates

Overview

Ion implantation and diffusion is used to deliver dopants into semiconductors, SIMS accurately measures the dopant
concentration for process development and monitoring.

The examples below show quantified depth profiles in silicon substrates.

Further Reading

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Combustion Synthesis of Triangular and Multifunctional ZnON (x # 0.15) Materials. 1.36 MB 35 downloads

Combustion Synthesis of Triangular and Multifunctional ZnON (x # 0.15) Materials. ...
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Characterization of TiO2 coatings prepared by a modified electric arc-physical vapour deposition system. 1.03 MB 40 downloads

Characterization of TiO2 coatings prepared by a modified electric arc-physical vapour...
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Application of Mass Resolved Ion Scattering, Secondary Ion Mass Spectrometry and Sample-Current Measurements for In Situ Depth Profiling of Thin Films. 4.15 MB 37 downloads

Application of Mass Resolved Ion Scattering, Secondary Ion Mass Spectrometry and...